1 UM0004 n-ch 100v fast switching mosfets symbol parameter rating units v ds drain-source voltage 100 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ 10v 1 2.5 a i d @t a =70 continuous drain current, v gs @ 10v 1 2 a i dm pulsed drain current 2 10 a eas single pulse avalanche energy 3 7.3 mj i as avalanche current 11 a p d @t a =25 total power dissipation 3 1.5 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w r jc thermal resistance junction-case 1 --- 25 /w id 100v 112m ? 2.5a the UM0004 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM0004 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z green device available general description features applications z high frequency point-of-load synchronous s small power switching for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sop8 pin configuration product summery bv dss r ds(on) bv dss
qm0004s 2 n-ch 100v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 100 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.098 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =2a --- 90 112 m v gs =4.5v , i d =1a --- 95 120 m v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient --- -4.57 --- mv/ i dss drain-source leakage current v ds =80v , v gs =0v , t j =25 --- --- 1 ua v ds =80v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =2a --- 20 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2 4 q g total gate charge (10v) v ds =80v , v gs =10v , i d =2a --- 26.2 36.7 nc q gs gate-source charge --- 3.8 5.32 q gd gate-drain charge --- 4.8 6.7 t d(on) turn-on delay time v dd =50v , v gs =10v , r g =3.3 i d =2a --- 4.2 8.4 ns t r rise time --- 7.6 14 t d(off) turn-off delay time --- 41 82 t f fall time --- 14 28 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 1535 2149 pf c oss output capacitance --- 60 84 c rss reverse transfer capacitance --- 37 52 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =5a 1.5 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 2.5 a i sm pulsed source current 2,6 --- --- 10 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =2a , di/dt=100a/s , t j =25 --- 35 --- ns q rr reverse recovery charge --- 17 --- nc electrical characteristics (t j =25 , unless otherwise noted) diode characteristics guaranteed avalanche characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =11a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. UM0004
3 n-ch 100v fast switching mosfets 0 3 6 9 12 15 00.511.522.5 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 88 90 92 94 96 46810 v gs (v) r dson (m ? ) i d =2a 0 2 4 6 8 10 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UM0004
4 n-ch 100v fast switching mosfets 10 100 1000 10000 1 5 9 13172125 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 1000 v ds (v) i d (a) t a =25 o c single pulse 100ms 100us 10ms dc 1ms 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM0004
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